bc308 Transistor Datenblatt pdf

BC308
Hersteller : FAIRCHILD[Fairchild Semiconductor]
Beschreibung : EPITAXIAL SILICON TRANSISTOR

BC308
Hersteller : KEC[KEC(Korea Electronics)]
Beschreibung : EPITAXIAL PLANAR TRANSISTOR (GENERAL PURPOSE, NOISE AMPLIFIER)

BC308
Hersteller : MICRO-ELECTRONICS[Micro Electronics]
Beschreibung : SILICON PLANAR EPITAXIAL TRANSISTOR

BC308
Hersteller : Fairchild Semiconductor
Beschreibung : PNP EPITAXIAL SILICON TRANSISTOR

BC308
Hersteller : KEC(Korea Electronics)
Beschreibung : EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

BC308
Hersteller : Micro Electronics
Beschreibung : PNP SILICON PLANAR EPITAXIAL TRANSISTOR

BC308
Hersteller : SEMTECH ELECTRONICS LTD.
Beschreibung : PNP Silicon Epitaxial Planar Transistor

BC308
Hersteller : KEC(Korea Electronics)
Beschreibung : Epitaxial Planar PNP Transistor(General Purpose??ow Noise Amplifier Application)(??????PNP???????????????????????

BC308
Hersteller : Fairchild Semiconductor
Beschreibung : PNP Epitaxial Silicon Transistor(PNP?????????)

BC308
Hersteller : Micro Electronics
Beschreibung : PNP SILICON PLANAR EPITAXIAL TRANSISTOR

BC308
Hersteller : KEC(Korea Electronics)
Beschreibung : EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, LOW NOISE AMPLIFIER)

BC308
Hersteller : Fairchild Semiconductor
Beschreibung : PNP EPITAXIAL SILICON TRANSISTOR

BC308
Hersteller : Micro-Electronics
Beschreibung : 300mW PNP silicon planar epitaxial transistor

BC308
Hersteller : Fairchild
Beschreibung : PNP Epitaxial Silicon Transistor

BC308
Hersteller : Usha
Beschreibung : Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.