irg4bc30u-s Transistor Datenblatt pdf

IRG4BC30U-S
Hersteller : International Rectifier
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. 1.95V, @Vge=15V, Ic=12A)

IRG4BC30U-S
Hersteller : IR
Beschreibung : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A