irg4bc30us Transistor Datenblatt pdf

IRG4BC30US
Hersteller : IRF[International Rectifier]
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. 1.95V, @Vge=15V, Ic=12A)

IRG4BC30US
Hersteller : International Rectifier
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

IRG4BC30US
Hersteller : International Rectifier
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)