f2013 Transistor Datenblatt pdf

F2013
Hersteller : Polyfet RF Devices
Beschreibung : PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F2013
Hersteller : Polyfet-RF
Beschreibung : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor