irg4ph50kd Transistor Datenblatt pdf
IRG4PH50KD
Hersteller : International Rectifier
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH50KD
Hersteller : IRF[International Rectifier]
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
IRG4PH50KD
Hersteller : IRF[International Rectifier]
Beschreibung : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
IRG4PH50KD
Hersteller : IR
Beschreibung : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A