pdtd123et Transistor Datenblatt pdf

PDTD123ET
Hersteller : Semiconductors
Beschreibung : resistor-equipped transistors;

PDTD123ET
Hersteller : NXP Semiconductors
Beschreibung : NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

PDTD123ET
Hersteller : NXP Semiconductors
Beschreibung : Low VCEsat (BISS) transistors

PDTD123ET
Hersteller : Philips Semiconductors
Beschreibung : NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW